GAIN-MODULATED 2ND-ORDER DISTRIBUTED-FEEDBACK GRATINGS FABRICATED BY MASKLESS FOCUSED ION-BEAM IMPLANTATION IN GAINASP HETEROSTRUCTURES

Authors
ORTH A REITHMAIER JP MULLER J KIESLICH A FORCHEL A WEBER J GYURO I ZIELINSKI E
Citation
A. Orth et al., GAIN-MODULATED 2ND-ORDER DISTRIBUTED-FEEDBACK GRATINGS FABRICATED BY MASKLESS FOCUSED ION-BEAM IMPLANTATION IN GAINASP HETEROSTRUCTURES, Microelectronic engineering, 27(1-4), 1995, pp. 343-346
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
343 - 346
Database
ISI
SICI code
0167-9317(1995)27:1-4<343:G2DGFB>2.0.ZU;2-1
Abstract
Second order periodic gain modulation in GaInAsP laser structures has been realized by maskless focused ion beam implantation. The structure s were implanted with Ga+-ions at an ion energy of 130 keV and line do ses between 3 x 10(6)/cm to 7 x 10(8)/cm. The periodicity of the grati ngs was designed for 77 K (460 nm period) and room temperature (500 nm period). Using optical pumping we have observed monomode emission spe ctra due to gain modulation at wavelengths of 1.44 mum (77 K) and 1.56 mum (300 K), respectively. Implanted structures show laser operation up to annealing temperatures of 700-degrees-C. This indicates that mas kless patterning by focused ion beams is compatible with epitaxial ove rgrowth.