SILICON-CONTAINING RESISTS WITH POSITIVE AND NEGATIVE TONE

Authors
ROUSSEEUW BAC PUYENBROEK R VANDERDRIFT E VANDEGRAMPEL JC
Citation
Bac. Rousseeuw et al., SILICON-CONTAINING RESISTS WITH POSITIVE AND NEGATIVE TONE, Microelectronic engineering, 27(1-4), 1995, pp. 375-379
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
375 - 379
Database
ISI
SICI code
0167-9317(1995)27:1-4<375:SRWPAN>2.0.ZU;2-B
Abstract
New silicon-containing polymers have been developed for e-beam and DUV exposure. The products show positive and negative tone images dependi ng on the polarity of the developer solution and a reasonable etch res istance in oxygen RIE plasma. Lithographic performance is investigated and the underlying mechanism is studied with spectroscopic and surfac e analysis techniques.