ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ASSISTED BANDGAP ENGINEERING IN GAINP ALGAINP/

Authors
HOMMEL J HOHING B GENG C KESSLER M HAASE D SCHOLZ F SCHWEIZER H
Citation
J. Hommel et al., ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ASSISTED BANDGAP ENGINEERING IN GAINP ALGAINP/, Microelectronic engineering, 27(1-4), 1995, pp. 445-448
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
445 - 448
Database
ISI
SICI code
0167-9317(1995)27:1-4<445:E(PBE>2.0.ZU;2-A
Abstract
A new method for bandgap engineering is demonstrated in the material s ystem GaInP/AlGaInP. The technique is based on the application of a hi gh-density, low-energy Ar+ ion exposure using an electron cyclotron re sonance (ECR) ion source. A significant reduction of the minimum annea ling temperature which is necessary to induce the ordered --> disorder ed transition of ordered GaInP/AlGaInP was observed.