HIGHLY ANISOTROPIC ROOM-TEMPERATURE SUB-HALF-MICRON SI REACTIVE ION ETCHING USING FLUORINE ONLY CONTAINING GASES

Authors
GOGOLIDES E GRIGOROPOULOS S NASSIOPOULOS AG
Citation
E. Gogolides et al., HIGHLY ANISOTROPIC ROOM-TEMPERATURE SUB-HALF-MICRON SI REACTIVE ION ETCHING USING FLUORINE ONLY CONTAINING GASES, Microelectronic engineering, 27(1-4), 1995, pp. 449-452
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
449 - 452
Database
ISI
SICI code
0167-9317(1995)27:1-4<449:HARSSR>2.0.ZU;2-6
Abstract
Silicon reactive ion etching using a mixture of SF6 and CHF3 at room t emperature was investigated. The etching characteristics as a function of gas composition, rf power, pressure and masking material as well a s electrode material were studied. Highly anisotropic, vertical and wi th smooth surface silicon pillars, lines and trenches with aspect rati os as high as 25:1 with dimensions down to 50 nm were obtained.