SELECTIVITY AND SI-LOAD IN DEEP TRENCH ETCHING

Authors
MULLER KP ROITHNER K TIMME HJ
Citation
Kp. Muller et al., SELECTIVITY AND SI-LOAD IN DEEP TRENCH ETCHING, Microelectronic engineering, 27(1-4), 1995, pp. 457-462
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
457 - 462
Database
ISI
SICI code
0167-9317(1995)27:1-4<457:SASIDT>2.0.ZU;2-W
Abstract
Time dependent measurements of etch rates and mask erosion rates for a variety of different features were carried out utilizing 0.25mum grou nd rule masks with different silicon loads. A small loading effect for the silicon etching and a strong secondary loading effect for the mas k erosion were observed leading to a time dependent selectivity. RIE l ag effects for oval trenches and long grooves were quantified by least square fits. Both feature types have essentially the same etch rate a nd RIE lag.