NITROGEN-IMPLANTED ETCH-STOP LAYERS IN SILICON

Authors
PANEVA R TEMMEL G BURTE E RYSSEL H
Citation
R. Paneva et al., NITROGEN-IMPLANTED ETCH-STOP LAYERS IN SILICON, Microelectronic engineering, 27(1-4), 1995, pp. 509-512
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
27
Issue
1-4
Year of publication
1995
Pages
509 - 512
Database
ISI
SICI code
0167-9317(1995)27:1-4<509:NELIS>2.0.ZU;2-V
Abstract
The aim of this work is to investigate the possibility to produce an e tch-stop layer in silicon through nitrogen ion implantation. The etchi ng process is influenced by nitrogen concentrations in silicon above 1 .10(20) cm-3. Under the experimental conditions the observed step heig ht between the implanted region and the unimplanted one did not exceed 1.8 mum.