DOPING PROFILING WITH SCANNING SURFACE HARMONIC MICROSCOPY

The scanning surface harmonic microscope in which a microwave signal i s applied across a tip-sample gap is sensitive to the capacitance/volt age characteristics of semiconductor samples. Its ability to distingui sh among a wide range of dopant concentrations with high lateral resol ution allow applications as a dopant profiler. Lateral dimensions of e lectronic features and the ultimate resolution limit of this technique are discussed using atomic resolution data and sizes of domain bounda ries on highly oriented pyrolytic graphite and using depletion regions on doping gratings similar to real device structures. The technologic al applicability of the instrument has been tested on polished surface s of trench capacitor arrays.