A CHARGE CONTROL AND CURRENT-VOLTAGE MODEL FOR INVERTED MODFETS

Authors
ANWAR AFM LIU KW KHONDKER AN
Citation
Afm. Anwar et al., A CHARGE CONTROL AND CURRENT-VOLTAGE MODEL FOR INVERTED MODFETS, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 586-590
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
4
Year of publication
1995
Pages
586 - 590
Database
ISI
SICI code
0018-9383(1995)42:4<586:ACCACM>2.0.ZU;2-8
Abstract
An analytical model is used to investigate properties of the two-dimen sional electron gas (2DEG) confined in a GaAs/AlGaAs quantum well (QW) formed in a inverted medulation doped field effect transistor (MODFET ). The position of the Fermi level and the average distance of the car riers in the well have been calculated as a function of the 2DEG conce ntration, n(s). A charge control model is presented based on the self- consistent solution of Schrodinger and Poisson's equation. The results show a unique behavior of the average distance of the 2DEG which incr eases with n(s), a property unique to these type of structures. The an alysis is extended to model current-voltage characteristics.