A STUDY OF DEEP-SUBMICRON MOSFET SCALING BASED ON EXPERIMENT AND SIMULATION

The scaling relationships among three fundamental quantities of deep-s ubmicron MOSFET's, i.e., effective channel length L(eff), device speed g(m)/WCox, and drain-induced barrier lowering (DIBL) delta V-t/delta V-ds, are investigated using both device measurements and numerical si mulations. It is found that these relationships can be expressed in po wer-law forms with excellent statistical significance for both experim ental and simulation data samples. The dependence of these scaling rel ationships on two sets of device parameters is also investigated exper imentally and confirmed by numerical simulations. These two sets of pa rameters are: 1) channel parameters-gate oxide thickness tot, threshol d voltage V-t, and channel doping profile; and 2) source/drain paramet ers-junction depth x(j), parasitic resistance R(sd), and junction abru ptness (e.g., ''halo'' doping structure). In the deep-submicron regime with L(eff) from 0.5 mu m down to sub-0.1 mu m, it is found that cert ain relationships among the three fundamental quantities are insensiti ve or ''universal'' with respect to particular subsets of device param eters. The relationship between g(m)/WCox and delta V-t/delta V-ds, wi th L(eff) as an implicit variable is found to be insensitive to t(ox), V-t, and channel doping profile within their respective experimental ranges. The trade-off between device performance (represented by g(m)/ WCox) and short channel effect (represented by delta V-t/delta V-ds) i s dominated by source/drain parameters x(j), R(sd) and junction abrupt ness, rather than channel parameters t(ox), V-t and channel doping pro file. Also, the power coefficient relating delta V-t/delta V-ds to L(e ff) is found to be insensitive to t(ox), V-t, and channel doping profi le.