MODELING OF THE INTRINSIC RETENTION CHARACTERISTICS OF FLOTOX EEPROM CELLS UNDER ELEVATED-TEMPERATURE CONDITIONS

Authors
PAPADAS C PANANAKAKIS G GHIBAUDO G RIVA C PIO F GHEZZI P
Citation
C. Papadas et al., MODELING OF THE INTRINSIC RETENTION CHARACTERISTICS OF FLOTOX EEPROM CELLS UNDER ELEVATED-TEMPERATURE CONDITIONS, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 678-682
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
4
Year of publication
1995
Pages
678 - 682
Database
ISI
SICI code
0018-9383(1995)42:4<678:MOTIRC>2.0.ZU;2-8
Abstract
A model for the intrinsic retention characteristics of FLOTOX EEPROM c ells is presented, which is based on the temperature dependence of the Fowler-Nordheim emission current. This model, which has been successf ully tested on single-poly-FLOTOX EEPROM cells; enables the device lif etime to be calculated for given memory operating conditions, instead of being extrapolated as is usually done. The sensitivity of the reten tion characteristics to several technological parameters is also inves tigated. It is expected that this intrinsic retention model (with mino r modifications) will also be applicable to FLASH EEPROM cells.