PERFORMANCE AND POTENTIAL OF ULTRATHIN ACCUMULATION-MODE SIMOX MOSFETS

A systematic experimental investigation of the influence of the silico n film thickness on the properties of accumulation-mode SOI MOSFET's h as been performed, and the relevant original results are presented. In terface coupling mechanisms acid their effects on the major device par ameters (threshold voltages, subthreshold swing, and transconductance) are analyzed. The feasibility of ultrathin accumulation-mode SIMOX MO SFET's for future submicrometer applications is demonstrated and discu ssed. Floating-body effects, which stand as critical aspects for SOI d evices, are also investigated and the benefit of the silicon film thin ning on the breakdown behavior of accumulation-mode devices is clearly established.