ANISOTROPY IN MONOCRYSTALLINE CVD DIAMOND GROWTH .2. DEFECT STRUCTUREOF HOT-FILAMENT GROWN FILMS DEPOSITED ON PLANAR SUBSTRATES

The defect structure of homoepitaxial diamond films grown by hot filam ent assisted chemical vapour deposition has been studied by spectrosco py. As substrates natural diamond plates of varying orientations were used. The growth experiments were carried out for several methane-hydr ogen gas phase compositions at different temperatures. Cathodoluminesc ence topography and infrared absorption spectroscopy showed that the a mount of grown-in boron and hydrogen is maximal for the fastest growin g {110} layers and minimal for the slowest growing {100} layers. For s everal {111} and {100} faces a clear relation between the mutual dista nce of growth steps and the formation of point defects was observed.