NATIVE DEFECTS AND DOPANTS IN GAN STUDIED THROUGH PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE

Native defects and dopants in GaN grown by organometallic chemical vap or deposition have been studied with photoluminescence and optically d etected magnetic resonance. For undoped samples, the combined results indicate the presence of residual shallow donors and accepters and dee p donors. A model for the capture and recombination among these defect s is developed. For Mg-doped samples, the experiments reveal shallow a nd perturbed accepters and shallow and deep donors. Hence, shallow and deep states for the native donor or donors appear in all samples. The Mg-acceptor is perturbed from its effective-mass state by nearby poin t defects.