EFFECT OF ANTIMONY-DOPING ON THE OXYGEN SEGREGATION COEFFICIENT IN SILICON CRYSTAL-GROWTH

The oxygen segregation coefficient was measured as a function of Sb co ncentration in Sb-doped Si melts. The crystals were grown in a closed quarts ampoule by a normal freezing method. The oxygen segregation coe fficient was obtained by comparing the oxygen concentration in the hea d part of the Si crystal with the oxygen concentration in the initial Si melt. The preliminary results showed that the oxygen segregation co efficient decreased with increasing the Sb concentration. The reductio n of the oxygen segregation coefficient due to Sb-doping is considered to result from the existence of Sb2O ordering in the Sb-doped Si melt .