TEMPERATURE-DEPENDENCE OF BREAKDOWN VOLTAGES IN SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/

In this paper, we investigate temperature dependence of breakdown volt age V-br from -40 to 110 degrees C in separate absorption, grading, ch arge, and multiplication (SAGCM) InP/InCaAs avalanche photodiodes (APD 's) with a range of device parameters. The experimental data shows tha t V-br is approximately a linear function of temperature, with a tempe rature coefficient eta(exp) between 0.13 and 0.16 V/degrees C. A physi cal model is developed and it demonstrates that V-br, indeed varies li nearly with temperature a ith a temperature coefficient eta(exp), abou t 0.155 V/degrees C. It also explains successfully the small variation of eta(exp) among the APD's. Good agreement between the physical mode l predictions and experimental data of published InP-based APD's is al so obtained, This good agreement demonstrates that the proposed physic al model is appropriate to model the temperature dependent characteris tics in any InP-based APD's.