OPTOELECTRONIC SYSTEM INTEGRATION ON SILICON - WAVE-GUIDES, PHOTODETECTORS, AND VLSI CMOS CIRCUITS ON ONE-CHIP

Citation
U. Hilleringmann et K. Goser, OPTOELECTRONIC SYSTEM INTEGRATION ON SILICON - WAVE-GUIDES, PHOTODETECTORS, AND VLSI CMOS CIRCUITS ON ONE-CHIP, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 841-846
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
42
Issue
5
Year of publication
1995
Pages
841 - 846
Database
ISI
SICI code
0018-9383(1995)42:5<841:OSIOS->2.0.ZU;2-1
Abstract
Optical waveguides, photodetectors, and VLSI CMOS circuits are integra ted monolithically in different ways: In a combined integration techni que the light-guiding film is deposited and covered with a SiO2 layer replacing standard PSG as the dielectric insulation of polysilicon and metallization. In a stacked method the waveguide fabrication starts a fter metallization and test of the CMOS circuits. Electrooptical coupl ing is performed by butt-, leaky wave-, or, mirror-coupling of wavegui des and photodetectors. To fabricate the system, SWAMI LOCOS technique is applied for monolithic integration of both, integrated optical dev ices, and microelectronic circuits. This paper discusses the integrati on technology and the results of static and dynamic measurements.