EXCESS COLLECTOR CURRENT DUE TO AN OXIDE-TRAPPED-CHARGE-INDUCED EMITTER IN IRRADIATED NPN BJTS

Authors
WEI A KOSIER SL SCHRIMPF RD COMBS WE DELAUS M
Citation
A. Wei et al., EXCESS COLLECTOR CURRENT DUE TO AN OXIDE-TRAPPED-CHARGE-INDUCED EMITTER IN IRRADIATED NPN BJTS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 923-927
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
5
Year of publication
1995
Pages
923 - 927
Database
ISI
SICI code
0018-9383(1995)42:5<923:ECCDTA>2.0.ZU;2-U
Abstract
Excess collector current in irradiated NPN BJT's is linked to an oxide -trapped-charge-induced inversion layer acting as an additional emitte r. Excess collector current is modeled by interpreting the inversion l ayer as an extension of the emitter.