INFLUENCE OF CONTACTS ON THE HOLD-OFF VOLTAGE AND RECOVERY OF ELECTRON-BEAM ACTIVATED GALLIUM-ARSENIDE SWITCHES

Authors
KENNEDY MK BRINKMANN RP SCHOENBACH KH
Citation
Mk. Kennedy et al., INFLUENCE OF CONTACTS ON THE HOLD-OFF VOLTAGE AND RECOVERY OF ELECTRON-BEAM ACTIVATED GALLIUM-ARSENIDE SWITCHES, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 1009-1011
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
5
Year of publication
1995
Pages
1009 - 1011
Database
ISI
SICI code
0018-9383(1995)42:5<1009:IOCOTH>2.0.ZU;2-F
Abstract
The dark current, the current gain, and the recovery behavior of elect ron-beam controlled gallium arsenide bulk switches was measured for va rious contact configurations. With non-injecting contacts, the pulsed hold-off voltage and the threshold voltage for current lock-on was fou nd to be higher by more than a factor of 3, compared to systems with i njecting contacts, Additionally, the switch gain could be increased by a factor of 3 by doping the electron-beam irradiated face of the swit ch with zinc.