Mk. Kennedy et al., INFLUENCE OF CONTACTS ON THE HOLD-OFF VOLTAGE AND RECOVERY OF ELECTRON-BEAM ACTIVATED GALLIUM-ARSENIDE SWITCHES, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 1009-1011
The dark current, the current gain, and the recovery behavior of elect
ron-beam controlled gallium arsenide bulk switches was measured for va
rious contact configurations. With non-injecting contacts, the pulsed
hold-off voltage and the threshold voltage for current lock-on was fou
nd to be higher by more than a factor of 3, compared to systems with i
njecting contacts, Additionally, the switch gain could be increased by
a factor of 3 by doping the electron-beam irradiated face of the swit
ch with zinc.