STUDIES OF MO SI MULTILAYERS WITH COHERENT ELECTRON-BEAMS/

Citation
M. Gajdardziskajosifovska et al., STUDIES OF MO SI MULTILAYERS WITH COHERENT ELECTRON-BEAMS/, Ultramicroscopy, 58(1), 1995, pp. 65-78
Citations number
26
Categorie Soggetti
Microscopy
Journal title
ISSN journal
03043991
Volume
58
Issue
1
Year of publication
1995
Pages
65 - 78
Database
ISI
SICI code
0304-3991(1995)58:1<65:SOMSMW>2.0.ZU;2-Z
Abstract
The Mo/Si multilayer system has been used to evaluate different method s employing coherent electrons from field-emission sources, in particu lar nanodiffraction and high-spatial-resolution parallel electron-ener gy-loss spectroscopy. Nanodiffraction patterns from the individual mul tilayer interfaces exhibited strong streaking on the transmitted disk, directed towards the Mo layer. The streaking increased with specimen thickness and reached a saturation value of similar to 7 mrad. This ef fect can be interpreted as due to refraction of high-energy electrons at the interface, yielding a measured mean inner potential difference between Mo and Si of 8 +/- 2 V. PEELS t/lambda studies show that speci men thickness profiles are variable for the same multilayer sample. Co re-loss integrated intensity profiles show asymmetry in interface widt h of sputtered multilayers, but probe deconvolution is needed to quant ify the width of the intermixed interface. The nanodiffraction and PEE LS methods are compared with previous studies with off-axis electron h olography, shadow imaging, and with more established incoherent imagin g methods.