ANALYSIS OF INTERNAL QUANTUM EFFICIENCY AND A NEW GRAPHICAL EVALUATION SCHEME

Citation
M. Hirsch et al., ANALYSIS OF INTERNAL QUANTUM EFFICIENCY AND A NEW GRAPHICAL EVALUATION SCHEME, Solid-state electronics, 38(5), 1995, pp. 1009-1015
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
38
Issue
5
Year of publication
1995
Pages
1009 - 1015
Database
ISI
SICI code
0038-1101(1995)38:5<1009:AOIQEA>2.0.ZU;2-F
Abstract
The analysis of internal quantum efficiency data is extended by a new graphical evaluation scheme. On the one hand, our method allows one to estimate the minority carrier diffusion length L and the back surface recombination velocity S. On the other hand the limitations of the in ternal quantum efficiency method are studied. A mathematical treatment of the equations describing internal quantum efficiency demonstrates that already a single measurement of either the effective diffusion le ngth L(eff) measured in the near infrared, or the collection efficienc y eta(c) measured in the near bandgap wavelength range, yields limits for L and S. More precise values can be obtained in specific cases, if the analysis of L(eff) and eta(c) are combined. In those cases, infor mation about the accuracy of L and S is obtained. We present a graphic al solution for the evaluation and illustrate our method using quantum efficiency data from both thick and thin silicon solar cells.