ELECTRICAL CHARACTERIZATION OF METAL-OXIDE INP TUNNEL-DIODES BASED ONCURRENT-VOLTAGE, ADMITTANCE AND LOW-FREQUENCY NOISE MEASUREMENTS

Electrical properties of metal-oxide-InP tunnel diodes, based on combi ned d.c. transport, admittance and low frequency noise measurements, a re reported. They appear to be strongly dominated by interfacial nonun iformities, which are related to a nonuniform distribution of trapping centers across the contact area. It is demonstrated that low frequenc y noise measurements give details on the spatial distribution of inter facial defect traps within the oxide thickness and across the diode se ction, and therefore can provide an effective qualification of the uni formity of the passivation of the semiconductor surface.