ANALYSIS OF THE RATE OF CHANGE OF INVERSION CHARGE IN THIN INSULATOR RHO-TYPE METAL-OXIDE-SEMICONDUCTOR STRUCTURES

A model of the rate of change of inversion charge has been used to inv estigate the capacitance relaxation associated with Fowler-Nordheim tu nneling current in thin insulator p-type Metal-Oxide-Semiconductor (MO S) structures. In this model, the rate of change of inversion charge i s taken to be equal to the difference between the generation current i n the space charge region of Si and the Fowler-Nordheim tunneling curr ent through the oxide. Using a step voltage, analytical expression for high frequency capacitance relaxation is obtained, the experimental r esults are consistent with model calculations.