ELECTRICAL-PROPERTIES OF 6.3-NM RF OXYGEN PLASMA OXIDE GROWN NEAR ROOM-TEMPERATURE WITH IN-SITU DRY-CLEANING OF SI SURFACE

6.3 nm RF oxygen plasma oxide is grown near room temperature in a barr el reactor at 1.0 torr dynamic pressure and 70 W RF power with an in s itu effective dry cleaning process preceding the oxide growth step. Th e as-grown oxide is very uniform and reproducible in thickness (6.3 +/ - 0.3 nm). The as-grown oxide after post-oxidation anneal in 6% O2-N2 ambient at 600-degrees-C for 30 min has 10 times more static sheet res istance just before the onset of FN emission (5 MV/cm) and has more dy namic sheet resistance at FN voltages than the RTO and furnace oxide. It shows a low leakage current density of 1 x 10(-8) A/cm2 at FN onset field of 5 MV/cm, but exhibits low E(b) in the 6-7 MV/cm range. It al so shows high N(f) of 1.5-3.0 x 10(11) cm-2 and midgap N(it) of 5-7 x 10(11) cm-2 eV-1.