INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS

Authors
DANNEVILLE F DAMBRINE G HAPPY H TADYSZAK P CAPPY A
Citation
F. Danneville et al., INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS, Solid-state electronics, 38(5), 1995, pp. 1081-1087
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
5
Year of publication
1995
Pages
1081 - 1087
Database
ISI
SICI code
0038-1101(1995)38:5<1081:IOTGLC>2.0.ZU;2-Y
Abstract
In this paper, the influence of the gate leakage current on the noise performance of MESFETs and MODFETs is investigated. Both a simple anal ytical model and a more realistic numerical model have been developed. It is shown that the noise performance is strongly dependent on the g ate leakage current value, especially at low frequency. The theoretica l results are discussed and compared with experimental ones.