EXTREMELY FLAT SURFACES BY LIQUID-PHASE EPITAXY

By analysis of liquid phase epitaxial (LPE) growth experiments of GaAs multiIayer structures, the incorporation rates at elementary growth s teps (kinetic coefficients) are estimated. Conditions are presented to prepare large singular surfaces with several micrometers distances be tween regular elementary steps. Such quasi atomically flat surfaces ma y become important for applications in semiconductor and superconducto r technologies, in surface physics and catalysis, as reference planes, and also as substrates for fabrication of extremely homogeneous layer s and perfect superlattices.