THE MECHANISM OF INCLUSION FORMATION DURING CRYSTAL-GROWTH BY THE TRAVELING HEATER METHOD

Authors
BARZ RU GILLE P
Citation
Ru. Barz et P. Gille, THE MECHANISM OF INCLUSION FORMATION DURING CRYSTAL-GROWTH BY THE TRAVELING HEATER METHOD, Journal of crystal growth, 149(3-4), 1995, pp. 196-200
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
149
Issue
3-4
Year of publication
1995
Pages
196 - 200
Database
ISI
SICI code
0022-0248(1995)149:3-4<196:TMOIFD>2.0.ZU;2-R
Abstract
Defects resulting from the crystallization of mother liquid inclusions are a common occurrence in crystals grown by the travelling heater me thod. The need to distinguish these defects from defects formed by sol id-state precipitation is stressed. This paper reports on an investiga tion of Te inclusions in Cd1-xZnxTe crystals which were grown from Te- rich solution zones and it gives an explanation of the mechanism of th eir formation by interpreting the composition changes of the matrix su rrounding them.