Undoped semi-insulating CdTe crystals with an as-grown shape similar t
o the device profile for radiation detection has been grown by casting
and subsequent unidirectional solidification. Crystals with maximum e
lectrical resistivity of 5.7 x 10(10) Omega . cm and an average value
of 5 x 10(9) Omega . cm have been grown in a die of uncoated fused sil
ica. Neither Cd source nor an inert gas overpressure was employed in t
he growth container. No additional preparation steps were required bef
ore the analysis of their detection behaviour. First measurements of t
he integral X-ray response have been carried out.