CASTING OF UNDOPED CDTE CRYSTALS WITH HIGH ELECTRICAL-RESISTIVITY

Citation
P. Rudolph et al., CASTING OF UNDOPED CDTE CRYSTALS WITH HIGH ELECTRICAL-RESISTIVITY, Journal of crystal growth, 149(3-4), 1995, pp. 201-206
Citations number
15
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
149
Issue
3-4
Year of publication
1995
Pages
201 - 206
Database
ISI
SICI code
0022-0248(1995)149:3-4<201:COUCCW>2.0.ZU;2-R
Abstract
Undoped semi-insulating CdTe crystals with an as-grown shape similar t o the device profile for radiation detection has been grown by casting and subsequent unidirectional solidification. Crystals with maximum e lectrical resistivity of 5.7 x 10(10) Omega . cm and an average value of 5 x 10(9) Omega . cm have been grown in a die of uncoated fused sil ica. Neither Cd source nor an inert gas overpressure was employed in t he growth container. No additional preparation steps were required bef ore the analysis of their detection behaviour. First measurements of t he integral X-ray response have been carried out.