256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/

Authors
SUMI T MORIWAKI N NAKANE G NAKAKUMA T JUDAI Y UEMOTO Y NAGANO Y HAYASHI S AZUMA M OTSUKI T KANO G CUCHIARO JD SCOTT MC MCMILLAN LD DEARAUJO CAP
Citation
T. Sumi et al., 256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/, Integrated ferroelectrics, 6(1-4), 1995, pp. 1-13
Citations number
4
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
6
Issue
1-4
Year of publication
1995
Pages
1 - 13
Database
ISI
SICI code
1058-4587(1995)6:1-4<1:2FNMTF>2.0.ZU;2-Q
Abstract
A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) i s achieved with 1T/1C cells, novel reference cell circuits and cell pl ate circuits. The FeRAM is fabricated in 1.2um CMOS process with singl e Aluminum interconnection and Bi based layered perovskite ferroelectr ic material ''Y-1'' and has no fatigue even after 10(12) destructive r ead and re-write stress cycles.