FERROELECTRIC GATE TRANSISTORS

Authors
RABSON TA ROST TA LIN H
Citation
Ta. Rabson et al., FERROELECTRIC GATE TRANSISTORS, Integrated ferroelectrics, 6(1-4), 1995, pp. 15-22
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
6
Issue
1-4
Year of publication
1995
Pages
15 - 22
Database
ISI
SICI code
1058-4587(1995)6:1-4<15:FGT>2.0.ZU;2-Y
Abstract
The characteristics of a field effect transistor with a lithium niobat e gate insulator are reported. Shifts in the gate characteristics cons istent with polarization switching have been observed. Comparisons wit h the results of some of the recently published theoretical models for ferroelectric gate transistors are made. Advantages and disadvantages of buffer layers in the gate structure are also discussed.