STUDY ON GRADUAL REVERSAL OF POLARIZATION IN FERROELECTRIC PZT THIN-FILMS FOR ADAPTIVE-LEARNING MFSFET APPLICATIONS

We have studied partial switching characteristics of ferroelectric PZT thin films prepared by sol-gel technique for adaptive-learning MFSFET (Metal/Ferroelectrics/Semi-conductor Field Effect Transistor)applicat ions. In this application, learning or initialization process can be r ealized by gradual reversal of polarization of the ferroelectric gate insulators. It is demonstrated that the polarization of PZT films can be gradually reversed by applying positive pulses to the MFM (Metal/Fe rroelectrics/Metal) capacitors and can be restored by negative short a pplying as the same.