SOL-GEL PROCESSING OF PLZT THIN-FILMS

Ferroelectric films of composition Pb1-xLax(ZryTi1-y)(1-x/4))O-3 (x=0- 0.07, y=0.4-0.6) have been prepared on Pt/Ti/SiO2/Si substrates using an alcohol based sol-gel process reacted at room temperature. FTIR, NM R, DTA, and SAXS measurements have been used to address the chemistry of the alkoxide-alcohol-water-acetylacetone system. Films having 10% l ead excess, dried at 150 degrees C, fired at 420 degrees C and RTP pro cessed (ramp rate 100 degrees C/sec., 650 degrees C for 60 sec.) cryst allized in the perovskite phase and showed P-s, P-r and H-c ranging fr om 25-30 mu C/cm(-2) 10-15 mu C/cm(-2) and 60-90 kV/cm, respectively. A model for variations in dielectric constant with porosity has been u sed to correlate these parameters with the solvent content of the sol.