CHEMICAL-VAPOR-DEPOSITION OF PB1-XLAXTIO3

We report chemical vapor deposition (CVD) of PbLaTiO3 films for integr ated pyroelectric devices. Pb(thd)(2), La(thd)(3) and Ti(O-Pr)(2)(thd) (2) were introduced to the reactor via a single liquid precursor solut ion that is vaporized. Substrate temperatures were approximately 535 d egrees C and post deposition annealing was not used. Films were deposi ted on fused silica and Pt metallized Si substrates. The liquid delive ry technique permitted excellent composition control and films on fuse d silica were predominantly [100] oriented with trace amounts of [110] and [111] present. Pyroelectricity for 0.7 mu m thick films deposited on Pt metallized Si was measured using a modified Byer-Roundi techniq ue and pyroelectric coefficients as high as 90 nC/cm(2) . K were obser ved. The high crystalline quality and pyroelectric properties are attr ibuted to the excellent composition control afforded by the liquid del ivery CVD technique.