THE EFFECT OF THIN-FILM SCALING ON THE CAPACITANCE VERSUS VOLTAGE CHARACTERISTIC OF A FERROELECTRIC MEMORY CELL

The effects on the capacitance versus voltage (CV) measurement from re ducing the film thickness of Symetrix Y-1 ferroelectric material will be presented. The effects on the zero bias capacitance, coercive volta ge and coercive electric field as a function of film thickness will al so be presented. Obtained CV data was compared to data obtained from h ysteresis measurements. The films were fabricated with a spin-on metho d and the thicknesses of the films were 1741, 2592, 3321, and 4050 Ang stroms. The zero voltage capacitance showed a linear relationship as a function of film thickness and a change in the dielectric constant fo r films greater than 2500 Angstroms. A simple circuit model suggests t he enhancement of the dielectric constant for the thin films may be ca used by the space charge regions.