DEPLETION AND DEPOLARIZING EFFECTS IN FERROELECTRIC THIN-FILMS AND THEIR MANIFESTATIONS IN SWITCHING AND FATIGUE

Citation
Ak. Tagantsev et al., DEPLETION AND DEPOLARIZING EFFECTS IN FERROELECTRIC THIN-FILMS AND THEIR MANIFESTATIONS IN SWITCHING AND FATIGUE, Integrated ferroelectrics, 6(1-4), 1995, pp. 309-320
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
6
Issue
1-4
Year of publication
1995
Pages
309 - 320
Database
ISI
SICI code
1058-4587(1995)6:1-4<309:DADEIF>2.0.ZU;2-R
Abstract
The manifestations of semiconductor depletion and depolarizing effects in switching and fatigue are studied and compared. It is shown that t hese effects play important but quite different roles in switching. Th e depletion effect strongly influences the values of the coercive fiel d, E(c), and is responsible for its film-thickness dependence. The dep olarizing effect influences significantly other parameters of the hyst eresis loops. It is shown that the inverse thickness dependence of E(c ) can not be attributed to the presence of a non-switching layer. Cont ribution of the effects in question to fatigue of the loop parameters is discussed.