DOMAIN BEHAVIOR IN LEAD-ZIRCONATE-TITANATE (PZT) THIN-FILM CAPACITORS

Authors
Citation
Ik. Yoo et Sb. Desu, DOMAIN BEHAVIOR IN LEAD-ZIRCONATE-TITANATE (PZT) THIN-FILM CAPACITORS, Integrated ferroelectrics, 6(1-4), 1995, pp. 329-336
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
6
Issue
1-4
Year of publication
1995
Pages
329 - 336
Database
ISI
SICI code
1058-4587(1995)6:1-4<329:DBIL(T>2.0.ZU;2-6
Abstract
Domain behavior based on surface energy and volumetric free energy was discussed in relation to imprint. Surface enery and volumetric free e nergy result in net free energy, which determines the critical size fo r domain growth. If a domain size is greater than the critical size, t hey will grow spontaneously under a constant electric field or even un der zero electric field. Sometimes, they can grow to the extent that t hey dominate reverse domains. This phenomenon appears to be polarizati on reversal under zero voltage bias. Spontaneous domain growth either under zero electric field or a constant electric field was demonstratr ed. This phenomenon can be partly a source of asymmetric imprint mecha nism.