UNIFIED SUBSTRATE CURRENT MODEL FOR MOSFETS

An analytical single-piece MOSFET substrate current model for circuit simulation is presented. The model, combined with a unified and contin uous-channel current model, is valid and continuous through all operat ing regimes (including weak inversion), for both conventional and LDD MOSFETs. To include the weak avalanche regime the effects of the volta ge drop in the substrate resistance have been accounted for in the cha nnel and substrate currents, and in the total charge equations. The ac curacy of the model (for currents and their derivatives) has been conf irmed by comparison with measurements. The model is very useful for th e design of submicron CMOS circuits. Copyright (C) 1996 Elsevier Scien ce Ltd