S. Biesemans et Km. Demeyer, DEFINING A CHARGE VECTOR AND ITS USE IN THE TREATMENT OF THE SHORT-CHANNEL EFFECT IN DEEP-SUBMICRON MOSFETS, Solid-state electronics, 41(1), 1997, pp. 95-102
A new vector called the 'charge density' or the 'charge' vector Q, is
defined based on the Poisson equation. Q is used to perform a simple a
nd visual vector analysis of the short channel effect (SCE). The conce
pt of Q(x, y) combines the charge sharing model with the 2-D potential
model into one consistent approach. This results in the derivation of
a new function: SCE(p), where p is a point in N-dimensional space (N
is the number of relevant device parameters). SCE(p) gives information
on whether or not a particular device is subject to the SCE. This fun
ction was used to derive from theory the empiral scaling law of Brews
et al. As an example, the V-T roll-off is calculated and the influence
of the substrate doping on the sub-threshold slope (S) is physically
explained using the newly developed concepts. Copyright (C) 1996 Elsev
ier Science Ltd