DEFINING A CHARGE VECTOR AND ITS USE IN THE TREATMENT OF THE SHORT-CHANNEL EFFECT IN DEEP-SUBMICRON MOSFETS

A new vector called the 'charge density' or the 'charge' vector Q, is defined based on the Poisson equation. Q is used to perform a simple a nd visual vector analysis of the short channel effect (SCE). The conce pt of Q(x, y) combines the charge sharing model with the 2-D potential model into one consistent approach. This results in the derivation of a new function: SCE(p), where p is a point in N-dimensional space (N is the number of relevant device parameters). SCE(p) gives information on whether or not a particular device is subject to the SCE. This fun ction was used to derive from theory the empiral scaling law of Brews et al. As an example, the V-T roll-off is calculated and the influence of the substrate doping on the sub-threshold slope (S) is physically explained using the newly developed concepts. Copyright (C) 1996 Elsev ier Science Ltd