SUBSTRATE INFLUENCES ON FULLY DEPLETED ENHANCEMENT-MODE SOI MOSFETS AT ROOM-TEMPERATURE AND AT 77 K

Authors
PAVANELLO MA MARTINO JA COLINGE JP
Citation
Ma. Pavanello et al., SUBSTRATE INFLUENCES ON FULLY DEPLETED ENHANCEMENT-MODE SOI MOSFETS AT ROOM-TEMPERATURE AND AT 77 K, Solid-state electronics, 41(1), 1997, pp. 111-119
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
1
Year of publication
1997
Pages
111 - 119
Database
ISI
SICI code
0038-1101(1997)41:1<111:SIOFDE>2.0.ZU;2-9
Abstract
In this work a theoretical and experimental analysis is presented of t he substrate potential drop influence on fully depleted enhancement mo de silicon-on-insulator (SOI) MOSFETs. The theoretical results are com pared with MEDICI numerical bidimensional simulations in order to vali date the proposed model. The substrate influence on the SOI MOSFET thr eshold voltage and sub-threshold slope is studied. Finally, a comparis on between modeled and experimental results is realized and a good agr eement is found. Copyright (C) 1996 Elsevier Science Ltd