MULTIDIMENSIONAL GEOMETRIC MODELING FOR 3D TCAD

Authors
REGLI P LAMBOGLIA K GARRETON G NEERACHER M WESTERMANN M STRECKER N FICHTNER W
Citation
P. Regli et al., MULTIDIMENSIONAL GEOMETRIC MODELING FOR 3D TCAD, Microelectronic engineering, 34(1), 1996, pp. 101-115
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
34
Issue
1
Year of publication
1996
Pages
101 - 115
Database
ISI
SICI code
0167-9317(1996)34:1<101:MGMF3T>2.0.ZU;2-U
Abstract
This article gives an overview of our current state of the art in gene rating 3D geometry and doping representations for complex semiconducto r devices. Focusing on the multidimensional aspects, we describe how-s tarting from the mask layout and the standard process representation ( SPR)-the 3D device geometry and doping distribution is built by assemb ling simulations of different dimensionality.