ELEMENTS OF THE LEAKAGE CURRENT OF HIGH-EPSILON FERROELECTRIC PZT FILMS

Authors
WOUTERS DJ WILLEMS G GROESENEKEN G MAES HE BROOKS K
Citation
Dj. Wouters et al., ELEMENTS OF THE LEAKAGE CURRENT OF HIGH-EPSILON FERROELECTRIC PZT FILMS, Integrated ferroelectrics, 7(1-4), 1995, pp. 173-184
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
7
Issue
1-4
Year of publication
1995
Pages
173 - 184
Database
ISI
SICI code
1058-4587(1995)7:1-4<173:EOTLCO>2.0.ZU;2-N
Abstract
Detailed analysis of the time evolution of the leakage current of thin -film PZT capacitors vs. bias voltage and temperature revealed the exi stence of three different current regimes. While both interface and bu lk effects can control the second (saturated) current regime, it is sh own that only bulk effects are responsible for both the first (transie nt) and third (oxygen vacancy controlled) regime.