NONLINEARITY OF FERROELECTRIC CAPACITORS ON DRAM R W OPERATIONS/

The effects of the nonlinearity and polarization relaxation of storage capacitor on DRAM R/W operations are explained using a simple model a nd PSPICE simulation. For a given line-voltage design and pass device, the voltage signal and the READ/WRITE times depend on the exact shape of the Q-V curve and on the amount of polarization relaxation. It has been found that typical high dielectric constant paraelectric materia ls provide smaller voltage signals than the linear capacitor, and exhi bit slower READ but faster WRITE compared to the linear capacitor.