DEPOSITION OF DIAMOND FILMS IN A CLOSED HOT-FILAMENT CVD SYSTEM

Citation
Gr. Lai et al., DEPOSITION OF DIAMOND FILMS IN A CLOSED HOT-FILAMENT CVD SYSTEM, Journal of research of the National Institute of Standards and Technology, 100(1), 1995, pp. 43-49
Citations number
8
Categorie Soggetti
Engineering
ISSN journal
1044677X
Volume
100
Issue
1
Year of publication
1995
Pages
43 - 49
Database
ISI
SICI code
1044-677X(1995)100:1<43:DODFIA>2.0.ZU;2-Y
Abstract
A closed system hot filament chemical vapor deposition (CVD) reactor h as been used to deposit diamond films on silicon substrates. A fixed c harge of hydrogen gas is fed into the deposition system until the desi red deposition pressure level is reached. A solid graphite cylindrical rod held above the tungsten filament was the carbon source. System pa rameters for diamond film growth have been determined. The diamond str ucture of the films has been verified by x-ray diffraction (XRD). Morp hology typical of CVD diamond films has been observed in scanning elec tron microscopy (SEM). The quality of the diamond films has been evalu ated by micro-Raman spectroscopy.