HEAT-TRANSFER AND MASS-TRANSPORT IN A MULTIWAFER MOVPE REACTOR - MODELING AND EXPERIMENTAL STUDIES

An improved detailed model for the calculation of the temperature dist ribution in a multiwafer Planetary Reactor(TM) has been developed. The temperature field of the reactor has been calculated in dependence of the reactor parameters for (Al,Ga)As growth as well as on the kind an d the thickness of the wall and susceptor deposits. The amount of para sitic wall deposits can be minimized by a proper tuning of the reactor temperature distribution. Calculated GaAs growth rate profiles on 3 i nch wafers show a strong dependence on the temperature field in the re actor and the amount of parasitic deposits. These predicted relationsh ips have been used to optimize the reactor temperature distribution in order to minimize parasitic wall depositions. By this procedure a gro wth rate uniformity of < 1% on 3 inch wafers can be reproducibly achie ved.