LARGE-SCALE MANUFACTURING OF COMPOUND SEMICONDUCTORS BY MOVPE

Citation
Ag. Thompson et al., LARGE-SCALE MANUFACTURING OF COMPOUND SEMICONDUCTORS BY MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 92-96
Citations number
6
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
92 - 96
Database
ISI
SICI code
0022-0248(1997)170:1-4<92:LMOCSB>2.0.ZU;2-8
Abstract
As more compound semiconductor devices reach large volume manufacturin g levels, a trend toward the use of the MOVPE technique is clear. In t his paper we examine the criteria needed for MOVPE equipment suitable for large scale manufacturing. We find that although uniformity and de vice performance are necessary, reproducibility is also critical, alon g with high throughput and low operating costs. These points are illus trated by actual examples including MMIC power amplifiers, HB-LEDs, an d solar cells. A realistic COO model provides a tool for evaluating MO VPE systems of different capacities. In situ control of key parameters during growth is now feasible, and will become an important method fo r increasing reproducibility and throughput. Lastly we look at the pro spects for automation, for decreasing labor costs as well as wafer han dling. This is likely to first have an impact on systems for the growt h of electronic device structures on large (100 and 150 mm) wafers.