DEMONSTRATION OF THE N-2 CARRIER PROCESS FOR LP-MOVPE OF III VS/

The suitability of an N-2 carrier in LP-MOVPE of GaInAs/InP device str uctures and for the growth of (Al)GalnP is investigated for the first time. Al-free GaInAs/InP HEMTs and MSM photodetectors exhibit cutoff f requencies of f(T)= 135 GHz and f(max) = 200 GHz and a bandwidth of 16 GHz and responsivity of 0.27 A/W, respectively. AIGaInP and GaInP lay ers deposited using the optimized growth conditions showed excellent s tructural, optical and homogeneity properties. For example X-ray diffr actograms with FWHMs as low as 15-16 arcsec for 1 mu m thick layers an d 300 K photoluminescence mappings over full 2 inch wafers with standa rd deviations of +/-0.23 and +/-0.26 nm were obtained for both materia ls.