MOVPE GROWTH OF INP GAINAS AND GAAS/GAINP HETEROSTRUCTURES FOR ELECTRONIC TRANSPORT APPLICATIONS/

Authors
CARLSSON N ANAND S CARLSSON SB GUSTAFSON B OMLING P RAMVALL P SAMUELSON L SEIFERT W WANG Q
Citation
N. Carlsson et al., MOVPE GROWTH OF INP GAINAS AND GAAS/GAINP HETEROSTRUCTURES FOR ELECTRONIC TRANSPORT APPLICATIONS/, Journal of crystal growth, 170(1-4), 1997, pp. 127-131
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
170
Issue
1-4
Year of publication
1997
Pages
127 - 131
Database
ISI
SICI code
0022-0248(1997)170:1-4<127:MGOIGA>2.0.ZU;2-6
Abstract
The influence of the layer structure on the electrical properties in ( i) modulation doped InP/GaInAs quantum well samples, and, (ii) GaAs/Ga InP resonant tunneling diodes has been investigated. The results revea l the importance of the different scattering processes. In particular, the influence of interface roughness scattering has been evaluated fo r both types of structures.