A. Stafford et al., IN-SITU MEASUREMENT OF THE THERMAL AND PHOTO-ASSISTED MOVPE OF ZNTE USING LASER REFLECTOMETRY, Journal of crystal growth, 170(1-4), 1997, pp. 182-187
In situ laser reflectometry has been used to study the growth kinetics
of ZnTe under pyrolytic and photo-assisted conditions from diisopropy
ltellurium (DIPTe) and dimethylzinc.triethylamine (DMZn.TEN). The grow
th rate of ZnTe was monitored as a function of VI:II ratio, temperatur
e and laser power density. From the results a model for the growth inv
olving the surface decomposition of DIPTe via a bimolecular reaction w
ith methyl radicals homolytically released from the decomposition of D
MZn.TEN is proposed. The activation energy under pyrolytic conditions
in the low temperature regime for a 1:1 VI:II ratio was found to be 27
.6 kcal/mol and under photo-assisted conditions this activation energy
was seen to be lowered to 21.9 kcal/mol. The growth kinetics are expl
ained in terms of two competitive processes. The decomposition of DMZn
on the surface will be enhanced with increasing substrate temperature
; however, the desorption rate of DIPTe will also be enhanced. The com
petitive nature of these two processes is seen to be particularly pron
ounced under laser illumination at high power densities, where a growt
h rate of 13 a.u./s was observed at 360 degrees C, laser power density
67 mW/cm(2), whereas at 380 degrees C for a similar power density the
growth rate was seen to be reduced to 10.5 a.u./s.