CORRELATION OF ORDERING FORMATION AND SURFACE-STRUCTURE IN (GAIN)P USING MODULATED MOVPE

Modulated metalorganic vapour phase epitaxial growth (MOVPE) is used t o clarify the role of the surface conditions on the ordering behaviour in ternary (GaIn)P layers. The alternating deposition of GaP and InP layers with individual thicknesses of up to one monolayer is successfu lly used for the growth of (GaIn)P bulk layers lattice matched to (100 ) GaAs substrates with various off-orientations. The layer quality and the degree of ordering are investigated using high-resolution X-ray d iffraction (XRD), transmission electron microscopy (TEM), and photolum inescence spectroscopy (PL), respectively. The application of modulate d growth conditions for the deposition of (GaIn)P bulk layers has a st rong influence on the degree of ordering achieved in the intermediate growth temperature regime where the highest degree of ordering occurs under continuous MOVPE, Beside a new boundary structure observed in la yers grown under modulated flux conditions, the successful growth of h ighly ordered (GaIn)P layers grown using the modulated MOVPE technique support the model that up to 2 monolayers of the (GaIn)P growth surfa ce are involved in the ordering formation process.