DEPENDENCE OF IMPURITY INCORPORATION UPON SUBSTRATE MISORIENTATION DURING GAAS GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY

Doping studies of the incorporation behaviour of three different dopan ts (Zn, In and Si) versus the misorientation of the (100) surface duri ng MOVPE growth of GaAs have been carried out with diethylzinc, trimet hylindium and disilane as precursors. The incorporation of the dopants has been studied as function of the input mole fraction dopant, growt h temperature, degree and direction of misorientation. In order to exp lain the results we discuss the BCF theory and the nature of the steps as function of above mentioned parameters. It appears that the BCF th eory alone cannot explain the results, a counteracting mechanism has b een introduced based on preferential arsenic desorption from the step edges.