THE ROLE OF HYDROGEN IN LOW-TEMPERATURE MOVPE GROWTH AND CARBON DOPING OF IN0.53GA0.47AS FOR INP-BASED HBT

Hydrogen radicals are decisive for the low temperature growth and carb on doping of In0.53Ga0.47As in LP-MOVPE. This is demonstrated for the growth of highly p-type doped In0.53Ga0.47As layers with CCl4 as dopan t source. Perturbed angular correlation measurements (PAC) were used t o investigate the passivation of accepters by hydrogen in low-temperat ure grown In0.53Ga0.47As. Based on the above analysis an InP-based lay er stack is developed which employs low-temperature growth of the base layer, high-temperature growth of the remaining HBT layers, and an in situ post-growth annealing under TMAs/N-2 ambient.